Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers
Z Mi, Z. Zhao, S Woo, M. Bugnet, M Djavid, et al.. Molecular beam epitaxial growth and characterization of Al(Ga)N nanowire deep ultraviolet light emitting diodes and lasers. Journal of Physics D: Applied Physics, IOP Publishing, 2016, 49 (36), pp.364006. ⟨hal-01973292⟩
Journal: Journal of Physics D: Applied Physics
Date de publication: 14-09-2016
Auteurs:
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Z Mi
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Z. Zhao
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S Woo
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M. Bugnet
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M Djavid
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X. Liu
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J Kang
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X. Kong
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J. Ji
- H. Guo
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Z. Liu
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G. Botton
